Science (New York, N.Y.)
|February 28, 1992
PubMed
まとめ

運動シミュレーションは,半導体成長中に異常なパターンがどのように形成されるかを明らかにします. この研究は,AlGaAsの超格子におけるアルミニウム分離と,シリコン堆積中の島形成のメカニズムを提案しています.

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