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Updated: Jul 11, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

CdTe/GaAsにおけるディスロケーションコア構造の直接観測 ((001))

A J McGibbon, S J Pennycook, J E Angelo

    Science (New York, N.Y.)
    |July 28, 1995
    PubMed
    まとめ

    研究者らは,複合半導体における亜格子極性を決定する新しい方法を開発した. この研究は,CdTe/GaAsにおけるロメール変位のための新しいコア構造を明らかにし,意外な非対称な構成を含む.

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