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Updated: Jul 7, 2026

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

セルフ・アセンブリポラライズモノレイヤの密度変動の影響が,シリコンの電子特性に及ぼす影響

Naama Peor1, Ruthy Sfez, Shlomo Yitzchaik

  • 1The Institute of Chemistry and the Hebrew University Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem, Jerusalem 91904, Israel.

Journal of the American Chemical Society
|March 5, 2008
PubMed
まとめ

この研究では,ケルビン探査技術を使用して,シリコン/二酸化シリコンのインターフェースを調査しました. 分子二極体と表面の覆い面は,電子特性に大きく影響し,帯の曲線と電子の親和性に影響を及ぼします.

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