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Updated: Jul 6, 2026

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology
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金属-炭素ナノチューブ接触:ショットキー・バリアと化学結合の間のリンク

Vincenzo Vitale1, Alessandro Curioni, Wanda Andreoni

  • 1IBM Research, Zurich Research Laboratory, 8803 Rüschlikon, Switzerland.

Journal of the American Chemical Society
|April 16, 2008
PubMed
まとめ

炭素ナノチューブ (CNT) フィールド効果トランジスタにおけるショットキー・バリアの高さ (SBH) を理解することは,先進の電子学の鍵となる. 金属接触点の化学結合は,金属のタイプや幾何学だけでなく,SBHを決定し,より良い接触設計を可能にします.

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