アザフルレネで封じ込められた単一壁の炭素ナノチューブFETデバイスのフォトスイッチング

Yongfeng Li1, Toshiro Kaneko, Jing Kong

  • 1Department of Electronic Engineering, Tohoku University, Sendai 980-8579, Japan. yfli@plasma.ecei.tohoku.ac.jp

PubMed
まとめ

単一壁の炭素ナノチューブ (SWNT) の内部にあるAZフルレンの分子は,紫外線に敏感なフィールド効果トランジスタ (FET) デバイスを作成します. この光誘発電子移転は,光源-流出電流の減少を引き起こし,光に依存した光スイッチ効果を示しています.

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