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Updated: Jun 21, 2026

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
08:50

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

高電子親和性モリブデン・ディチオレン複合体の使用により,p-ドープホールの輸送層にドープドープドープドープドープドープドープドープドープドープドープドープドープドープドープドープドープドープドープドープドープドープドープドープドープド

Yabing Qi1, Tissa Sajoto, Stephen Barlow

  • 1Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544-5263, USA. yqi@princeton.edu

Journal of the American Chemical Society
|August 15, 2009
PubMed
まとめ

モリブデントリス[1,2-bis(トリフルオロメチル) エタン-1,2-ディチオリン] (Mo(tfd) ((3)) は,高い電子親和性を示し,有機半導体にとって効果的なpドーパントとなっています. この新しいドーパントは,効率的なp-ドーピングと宿主物質における良好な安定性を示しています.

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Schottky Barrier Diode01:27

Schottky Barrier Diode

Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...