スピン注入フィールドエフェクトトランジスタにおけるスピンプレセッションの制御

Hyun Cheol Koo¹, Jae Hyun Kwon, Jonghwa Eom

¹Center for Spintronics Research, Korea Institute of Science and Technology (KIST), 39-1 Hawolgok-dong, Seongbuk-gu, Seoul, 136-791, Korea.

Science (New York, N.Y.)

|September 19, 2009

まとめ

この研究では,InAsヘテロ構造を用いたスピン注入フィールド効果トランジスタを実証しています. 制御された電気注入とスピン極化電子の検出が示され,振動チャネル伝導率につながります.

科学分野:

凝縮物質物理学凝縮物質物理学
マテリアルサイエンス材料科学
半導体デバイス物理学の物理

背景:

従来の電子機器は,情報処理の限界に直面しています.
Spintronicsは,電子のスピンを利用することで,機能が強化されています.
スピン注入フィールド効果トランジスタは,スピントロニクスにおける重要な装置である.

研究の目的:

機能するスピン注入フィールド効果トランジスタを実証するために.
信頼性の高い電気注入とスピン極化電子の検出を達成するために.
ゲート電圧調節下でチャネル伝導率の振る舞いを調査するために.

主な方法:

高機動性インジウムアルセナイド (InAs) ヘテロ構造のスピン注入フィールド効果トランジスタの製造.
電気スピンインジェクションと検出技術の経験的校正.
ゲート電圧の関数としてチャネル伝導率の測定.

主要な成果:

スピン注入フィールド効果トランジスタの実証が成功しました.
バリスティック・スピン・ポラライズド電子輸送の観測.
経験的に校正された電気スピンインジェクションと検出.
理論モデルと一致する,観測された振動チャネル伝導率.

結論:

実証されたデバイスは,スピントロニクスアプリケーションのためのInAsヘテロ構造の可能性を確認しています.
トランジスタの幾何学におけるスピン極化電子に対する電気制御は実現可能である.
さらなる研究は,これらの発見を高度なスピンベースの情報処理に活用することができます.

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