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関連する概念動画

Field Effect Transistor01:29

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
MOSFET01:16

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
Non-ohmic Devices00:51

Non-ohmic Devices

In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A diode...
Types of Semiconductors01:20

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
Characteristics of MOSFET01:17

Characteristics of MOSFET

Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable quicker...

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関連する実験動画

Updated: Jun 17, 2026

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
09:59

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

Published on: June 23, 2018

柔軟なセンサー配列のための有機非揮発性メモリトランジスタ.

Tsuyoshi Sekitani1, Tomoyuki Yokota, Ute Zschieschang

  • 1Department of Electrical and Electronic Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan.

Science (New York, N.Y.)
|December 17, 2009
PubMed
まとめ
この要約は機械生成です。

研究者らは,ハイブリッド介電剤を用いた柔軟な有機非揮発性メモリ配列を開発した. これらの配列は,低電圧の動作を可能にし,圧力イメージングのためのセンサーマトリックスに統合することができます.

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A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

Sensing of Barrier Tissue Disruption with an Organic Electrochemical Transistor
11:17

Sensing of Barrier Tissue Disruption with an Organic Electrochemical Transistor

Published on: February 10, 2014

関連する実験動画

Last Updated: Jun 17, 2026

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
09:59

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

Published on: June 23, 2018

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

Sensing of Barrier Tissue Disruption with an Organic Electrochemical Transistor
11:17

Sensing of Barrier Tissue Disruption with an Organic Electrochemical Transistor

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科学分野:

  • マテリアルサイエンス 材料科学
  • オーガニック・エレクトロニクス
  • ナノテクノロジー ナノテクノロジー

背景:

  • オーガニック・トランジスタは,柔軟な電子機器の可能性を秘めています.
  • 非揮発性メモリは,データストレージアプリケーションにとって非常に重要です.
  • ハイブリッド介電剤は,トランジスタの性能を向上させることができます.

研究 の 目的:

  • 有機トランジスタを使用した柔軟な基板上に非揮発性メモリ配列を開発する.
  • 有機浮遊ゲートトランジスタにおけるハイブリッド介電剤の性能を調査する.
  • 圧力イメージングのための柔軟なセンサーマトリックスを作成します.

主な方法:

  • ハイブリッド介電材料 (2nm SAM + 4nm プラズマ培養の金属酸化物) を使った有機トランジスタの製造.
  • 有機浮遊ゲートトランジスタを圧力感受性ゴムシートでセンサーマトリックスに統合する.
  • 非揮発性メモリ特性 (プログラム/消去サイクル,値電圧のシフト) の特徴づけ.

主要な成果:

  • 柔軟なプラスチック基板上に非揮発性メモリ配列を達成しました.
  • 証明された低いプログラム/消去電圧 (<または=6V) で,大きな,可逆的な値電圧のシフト.
  • トランジスタは1000回以上のプログラム/消去サイクルを示した.
  • 空間圧力の分布を2D画像として検出し,保存できるセンサーマトリックスを作成しました.

結論:

  • ハイブリッド介電材料は,柔軟な基板上で高性能な有機非揮発性メモリを可能にします.
  • 開発された有機メモリ技術は,圧力イメージングを含む柔軟なセンサーアプリケーションに適しています.
  • この研究は,将来のアプリケーションのために柔軟で低消費電力の電子機器の開発を進めています.