窒素を含むオリゴアセンスを基にしたアンビポーラ薄膜トランジスタからの高およびバランスの取れた穴と電子の移動性
Yi-Yang Liu1, Cheng-Li Song, Wei-Jing Zeng
1State Key Laboratory of Applied Organic Chemistry (SKLAOC), College of Chemistry and Chemical Engineering, Lanzhou University, Lanzhou, 730000, China.
Journal of the American Chemical Society
|October 29, 2010
まとめ
研究者らは,アセンベースのフィールド効果トランジスタ (FET) のC-H結合を窒素に置き換え,高性能有機半導体を設計した. この戦略により,高孔と電子の移動性がバランスの取れた材料が生み出され,先端のアンビポラーFETアプリケーションへの道が開けました.
科学分野:
- オーガニック・エレクトロニクス
- マテリアルサイエンス 材料科学
- 半導体物理学の物理
背景:
- アセン基の有機半導体は,フィールドエフェクトトランジスタ (FET) に不可欠です.
- バランスの取れた両極電荷輸送 (穴と電子の両方) を達成することは,有機FET材料の設計における課題です.
- 分子構造の修正は,半導体の性能を向上させるための鍵です.
研究 の 目的:
- 高性能,アンビポラー有機半導体材料の設計のための新しい戦略を開発する.
- FETアプリケーションのための新しい窒素含有オリゴアセン誘導体を合成し,特徴づけること.
- 充電輸送特性に対する窒素添加の影響を調査する.
主な方法:
- オリゴアセンの骨格に含まれるC-H分子を窒素原子に置き換える設計戦略が採用されました.
- 2つの新しい有機半導体である6,13-bis (((triisopropylsilylethynyl) アントラディピリジン (1) と8,9,10,11-テトラフッロロ-6,13-bis (((triisopropylsilylethynyl) -1-アザペンタセン (3) が合成されました.
- 合成された材料のフィールドエフェクトトランジスタ (FET) の特性を測定し,電荷キャリアの移動性を決定しました.
主要な成果:
- 合成された両方の材料は,高かつバランスのとれた穴 (μ(h)) と電子 (μ(e)) 移動性を示した.
- 展示された材料1では,μ (h) =0.11cm2/V·s,およびμ (e) =0.15cm2/V·sが示されました.
- 材料3はμ (h) =0.08cm2/V·sとμ (e) =0.09cm2/V·sを示し,両極性行動を確認した.
結論:
- オリゴアセンのC-Hを窒素に置き換えることは,高性能アンビポラーFET材料を作成するための実行可能な戦略です.
- 窒素含有オリゴアセンは,先進的な有機電子機器に有望な特性を提供します.
- この研究は,次世代の二極性有機半導体の合理的な設計のための新しい道を開きます.
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