アリレチニレンチオラートによるSAMの量子干渉の証拠は,ユーテクティックなGa-In (EGaIn) 上の接触を持つトンネリングの交差点にある

Davide Fracasso1, Hennie Valkenier, Jan C Hummelen

  • 1Stratingh Institute for Chemistry, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands.

まとめ

この研究では,線形結合のアントラセンの誘導体は,交叉結合または断裂結合の誘導体よりも大幅に高い電流密度を示していることが示されています. 量子干渉効果は,分子電子輸送におけるこれらの違いを理解するための鍵です.

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