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Updated: Jun 2, 2026

Scanning-probe Single-electron Capacitance Spectroscopy
10:53

Scanning-probe Single-electron Capacitance Spectroscopy

Published on: July 30, 2013

二次元の電子システムにおける非常に大きな電容度増強

Lu Li1, C Richter, S Paetel

  • 1Department of Physics, Massachusetts Institute of Technology (MIT), Cambridge, MA 02139, USA.

Science (New York, N.Y.)
|May 14, 2011
PubMed
まとめ

研究者らは,フィールド効果トランジスタ構造におけるゲート容量の有意な強化を発見した. この発見は,LaAlO{3}/SrTiO{3}インターフェースの電子枯渇近くで観察され,より効率的で低電力電子機器につながる可能性があります.

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