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Updated: May 29, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

シリコンにおける容易な電荷移位は,間隔の反応を誘発する

Maryam Ebrahimi1, Kai Huang, Xuekun Lu

  • 1Department of Chemistry and Institute of Optical Sciences, University of Toronto, 80 St. George Street, Toronto, Ontario M5S 3H6, Canada.

Journal of the American Chemical Society
|September 2, 2011
PubMed
まとめ

シリコン表面上のアドソーバット間の長距離排斥相互作用が観察されました. この現象は,電荷移転によって引き起こされ,Si{111}-7×7表面上の分子と原子のユニークな空間的配置につながります.

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