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Updated: May 29, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
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Published on: May 28, 2016

ドーピングされたLaGaO3アニオン導体の欠陥:NMRスペクトルの特徴,局所環境,および欠陥熱力学をリンクする

Frédéric Blanc1, Derek S Middlemiss, Zhehong Gan

  • 1Department of Chemistry, State University of New York, Stony Brook, New York 11790-3400, United States.

Journal of the American Chemical Society
|September 16, 2011
PubMed
まとめ

ドーピングされたランタンガラートペロブスキットは,固体酸化物燃料電池の有望性を示しています. これらの材料の酸素の空白は,マグネシウムではなく,ガリウムを取り囲んでおり,その性能に影響を与えます.

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Imperfections in Crystal Structure: Non-Stoichiometric Defects

Non-stoichiometric defects refer to a type of defect in the crystal structure of a compound where the ratio of its constituent elements deviates from the ideal stoichiometric ratio. There are two main types of non-stoichiometric defects: metal excess defects and metal deficiency defects.Metal excess defects occur when there is a slight surplus of metal ions than what is required by the stoichiometric ratio of the compound. For example, heating a sodium chloride crystal in sodium vapor results...
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Imperfections in Crystal Structure: Stoichiometric Point Defects

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