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マルチゲートトランジスタは,古典的な金属酸化物半導体フィールド効果トランジスタの未来です

Isabelle Ferain¹, Cynthia A Colinge, Jean-Pierre Colinge

¹Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade, Cork, Ireland.

|November 19, 2011

まとめ

ミニチュア化されたトランジスタ,または金属酸化物半導体フィールド効果トランジスタ (MOSFET) は,物理的な限界に近づいています. 新しいマルチゲートトランジスタの設計は,マイクロ電子チップの性能の継続的な進歩への道を提供します.

科学分野:

固体物理固体物理学
マテリアルサイエンス材料科学
電気工学電気工学とは

背景:

40年以上にわたり,トランジスタの指数関数的なスケーリングは,マイクロ電子チップの進歩を推進してきました.
メタル酸化物半導体フィールド効果トランジスタ (MOSFET) の縮小により,トランジスタ密度が増加しました.
現在のMOSFETの寸法は,電気特性が劣化し,さらなるスケーリングを阻害する限界に近づいています.

研究の目的:

伝統的なMOSFETスケーリングの限界に対処するために.
マルチゲートトランジスタの潜在能力を紹介し,強調する.
次の10年間,コンピュータの性能の継続的な向上を確実にする.

主な方法:

歴史的なトランジスタスケーリングのトレンドのレビュー.
スケールされたMOSFETにおける電気特性分解の分析.
多ゲートトランジスタの幾何学を新しいソリューションとして導入.

主要な成果:

指数関数トランジスタの縮小は,基本的な物理的な制限に近づいています.
電気的特性の劣化は,現在のMOSFETにとって大きな課題です.
マルチゲートトランジスタのアーキテクチャは,平面MOSFETの実行可能な後継者として浮上しています.

結論:

物理的な制約のため,指数関数的なMOSFETスケーリングの時代は終わろうとしています.
マルチゲートトランジスタは,これらの制限を克服できる新しい世代のデバイスを表しています.
この新しい幾何学は,コンピュータの性能の将来の強化に不可欠です.

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