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Updated: May 23, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

分子メモリスイッチング装置としてのロジウムのアゾアニオンラジカル複合体:電流-電圧特性の分離,特徴化,評価

Nanda D Paul1, Utpal Rana, Sreetosh Goswami

  • 1Department of Inorganic Chemistry, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700 032, India.

Journal of the American Chemical Society
|April 3, 2012
PubMed
まとめ

2つの希少なRh(III) アゾアニオンダイラジカル複合体は,RAM/ROMアプリケーションの優れたメモリスイッチングを示しています. これらのシステムは,鉄磁気的に結合されたラジカルを持つ三重体の状態が優勢である.

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Magnetometric Characterization of Intermediates in the Solid-State Electrochemistry of Redox-Active Metal-Organic Frameworks

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