大量の横断ゼロフィールドがMn (II) Re (IV) CN (CN) 2単鎖磁石に分裂することで誘発されるゆっくりとした磁気リラックス

Xiaowen Feng1, Junjie Liu, T David Harris

  • 1Department of Chemistry, University of California, Berkeley, California 94720, USA.

まとめ

研究者は,磁気アニソトロピーの障壁を研究するためにモデル化合物を合成しました. 彼らは,レニウム (IV) センターの横断アニソトロピーは,ゆっくりとした磁気リラックスを達成し,単一分子磁石を設計する鍵であることを発見しました.

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