Mn2 + オキシプニクチド NdMnAsO ((1-x) F ((x) での巨大な磁気抵抗
Eve J Wildman1, Janet M S Skakle, Nicolas Emery
1Department of Chemistry, University of Aberdeen, Meston Walk, Aberdeen AB24 3UE, UK.
Journal of the American Chemical Society
|May 11, 2012
まとめ
巨大な磁気抵抗は,新しいNdMnAsO{1-x) F{-x) 材料で観察されました. 抗鉄磁性オキシプニクチドのこの発見は,高度な磁気記憶装置の道を開く可能性がある.
科学分野:
- マテリアルサイエンス 材料科学
- 凝縮物質物理学 凝縮物質物理学
背景:
- 巨大磁気抵抗 (CMR) は,磁場下で材料の抵抗性が劇的に低下する珍しい現象です.
- CMR素材は次世代メモリデバイスの潜在力を抱えています.
研究 の 目的:
- 比較的未知のMn2+) オキシプニクチド族の巨大磁気抵抗を調査する.
- 潜在的なCMR材料としてNdMnAsO{1-x) F{x) を調査する.
主な方法:
- 新しいNdMnAsO{1-x) F{-x) 化合物の合成.
- 異なる磁場下での電子抵抗性の特徴.
主要な成果:
- 巨大な磁気抵抗は,NdMnAsO{1-x) F{-x) }で成功裏に観察されました.
- CMR効果は,磁場下での断熱と半導体相の相互作用から生じる.
結論:
- NdMnAsO{1-x) F{x) は,競合する磁気相と電子相によって駆動されるCMRを示している.
- この類の材料は,高度な磁気メモリ技術の開発に新たな道を開きます.
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