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Updated: May 21, 2026

Gradient Echo Quantum Memory in Warm Atomic Vapor
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フェーズチェンジメモリの速度制限を破る

D Loke1, T H Lee, W J Wang

  • 1Data Storage Institute, Agency for Science, Technology and Research (A*STAR), Singapore.

Science (New York, N.Y.)
|June 23, 2012
PubMed
まとめ

研究者は,低電圧で結晶化運動を制御することによって,相変化ランダムアクセスメモリ (PCRAM) の速度を向上させました. このブレークスルーにより,次の世代の非揮発性メモリデバイスでは,より速い書き込み速度と改善されたデータ保持が可能になります.

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