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Updated: Feb 16, 2026

Silicon Nanowires and Optical Stimulation for Investigations of Intra- and Intercellular Electrical Coupling
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高性能垂直トランジスタ用のシリコン上のIII-Vナノワイヤチャネル

Katsuhiro Tomioka1, Masatoshi Yoshimura, Takashi Fukui

  • 1Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-8628, Japan. tomioka@rciqe.hokudai.ac.jp

Nature
|August 3, 2012
PubMed
まとめ

研究者らは,シリコン上のインジウムガリウムアルセナイド (InGaAs) ナノワイヤを使用して,新しい周辺ゲートトランジスタを開発しました. これらの高度なフィールド効果トランジスタは,次世代の電子機器とワイヤレスネットワークの電流と伝導性を強化します.

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