非揮発性メモリデバイスのアプリケーションにおけるスピネルフェライト材料の機会は,その抵抗性スイッチング性能に基づいています
1State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, China.
Journal of the American Chemical Society
|August 31, 2012
まとめ
スピネルフェライトは,優れた抵抗性スイッチング特性により,非揮発性メモリデバイスの有望性を示しています. この研究では,Pt/NiFe(2) O(4) /Pt構造におけるフィラメント形成機構を明らかにしています.
科学分野:
- マテリアルサイエンス 材料科学
- 固体物理 固体物理学
- デバイス物理学 デバイス物理学
背景:
- スピネルフェライトは,非揮発性メモリアプリケーションのために調査されています.
- 抵抗性スイッチング行動は,メモリデバイスの機能の鍵です.
研究 の 目的:
- 非揮発性記憶装置におけるスピネルフェライトの潜在能力を実証する.
- Pt/NiFe{2O}{4}/Pt構造のレジスティヴスイッチング性能とメカニズムを調査する.
主な方法:
- Pt/NiFe(2)O(4)/Pt装置の製造について
- 抵抗性スイッチング性能の特徴 (電圧,保持,耐久性).
- 伝導機構 (オーム,ショットキー放射) と温度に依存する性質の分析.
主要な成果:
- Pt/NiFe ((2) O ((4) /Pt構造は,低動作電圧,高いデバイス出力,長時間保持 (10^5秒),および良好な耐久性 (2.2 × 10^4サイクル) を示した.
- オーム伝導は低抵抗状態と低電圧の高抵抗状態を支配した.
- Schottkyの放射は,より高い電圧の高抵抗状態で観察されました.
結論:
- Pt/NiFe(2) O(4) /Pt装置の抵抗性スイッチングは,導電フィラメントの形成と破裂に起因する.
- 酸素の空白とcation redox効果は,スイッチングメカニズムにとって極めて重要です.
- スピネルフェライトは,高度な非揮発性メモリアプリケーションの有望な候補である.
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