ビスミュート酸化硫化物Bi4O4S3の散発超伝導性について
Shiva Kumar Singh1, Anuj Kumar, Bhasker Gahtori
1Quantum Phenomena and Applications Division, National Physical Laboratory (CSIR), Dr. K. S. Krishnan Road, New Delhi 110012, India.
Journal of the American Chemical Society
|September 26, 2012
まとめ
我々はBi(4) O(4) S(3) を合成し,それが 4.4 K の移行温度を持つ大量超伝導体であることを確認しました. この発見は,不純物駆動の超伝導性を排除し,層状硫化物研究のための新しい道を開きます.
科学分野:
- マテリアルサイエンス 材料科学
- 凝縮物質物理学 凝縮物質物理学
- 固体化学 固体化学
背景:
- 最近の報告では,層状の硫化物における超伝導性が示唆されている.
- Bi ((4) O ((4) S ((3) は,超伝導性研究のための潜在的な候補である.
研究 の 目的:
- バキュームエンカプスレーション技術を使用してBi(4) O(4) S(3) を合成する.
- その超伝導性特性を特徴づける.
- 超伝導性の起源を調査する.
主な方法:
- 500 °Cでの真空封じ込み合成
- AC/DC マグネチゼーションの測定.
- 同熱磁化 (M-H) と磁力伝送の測定.
主要な成果:
- 合成されたBi(4) O(4) S(3) の四角構造 (I4/mmm).
- 超伝導性が確認され,移行温度 (T ((c)) は 4.4 K.
- 決定された下臨界場 (H(c1)) ~15 Oeと上臨界場 (H(c2) ((0)) ~31 kOe.
結論:
- Bi(4) O(4) S(3) は,不純物によって駆動されない,大量超伝導性を表しています.
- この発見は,超伝導性のための層状硫化物のさらなる探査を支持する.
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