高熱電気および可逆のp-n-p伝導型のスイッチングは,二重金属カルコゲニドに統合されています

Chong Xiao¹, Xinming Qin, Jie Zhang

¹Division of Nanomaterials and Nanochemistry, Hefei National Laboratory for Physical Sciences at the Microscale, University of Science & Technology of China, Hefei, Anhui, 230026, P. R. China.

Journal of the American Chemical Society

|October 17, 2012

まとめ

研究者は,相変換を制御することによって,AgBiSe2で高熱電性能と可逆半導体スイッチングを達成しました. この二金属カルコゲニドの発見は,高度な多機能電子機器の扉を開く.

科学分野:

固体化学固体化学
マテリアルサイエンス材料科学
凝縮物質物理学凝縮物質物理学

背景:

固体における相転換は,材料技術と固体化学の基礎となる.
段階移行中の物理的特性変化の制御は,機能的な材料の開発に不可欠です.

研究の目的:

高い熱電性能と,二金属カルコゲン化物における可逆的なp-n-p半導体スイッチングを達成するために.
段階移行中のこれらの性質の背後にあるメカニズムを調査する.

主な方法:

AgBiSe2.2の実験合成と特徴付けについて
温度依存のポジトロン消滅とラーマンスペクトルの分析.
連続した六角形・ロムボエドール・立方形の相変化の調査.

主要な成果:

高熱電性能 (ZT値1.5で700K) を達成しました.
証明された可逆性p-n-p半導体スイッチングと相変化を統合した.
p-n-pスイッチングの起源として,相変化中のバイメタル原子交換が確認された.
交換後の完全なバイメタル原子の乱れが,高熱電気性能に結びついている.

結論:

この研究では,AgBiSe2.2における高熱電気性能と可逆的なp-n-pスイッチングを成功裏に統合しました.
フェーズ移行中のバイメタル原子交換は,固体化学と材料科学を豊かにする新しい現象です.
ディメタルカルコゲニドは,新しい多機能電子機器にとって有望である.

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