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Updated: May 16, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

フォト電気効果によるメモリデバイスの多層導電性スイッチング

Changqing Ye1, Qian Peng, Mingzhu Li

  • 1Beijing National Laboratory for Molecular Sciences (BNLMS), Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China.

Journal of the American Chemical Society
|November 20, 2012
PubMed
まとめ

研究者らは,ドナー・ブリッジ・アクセプター分子を用いて,多層メモリデバイスのための光電子スイッチを開発した. この分子は,光学と電気の両方の制御を可能にし,三元状態と高度なデータストレージのための高いオン/オフ比を達成します.

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MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
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Photoelectric Effect

When light of a particular wavelength strikes a metal surface, electrons are emitted. This is called the photoelectric effect. The minimum frequency of light that can cause such emission of electrons is called the threshold frequency, which is specific to the metal. Light with a frequency lower than the threshold frequency, even if it is of high intensity, cannot initiate the emission of electrons. However, when the frequency is higher than the threshold value, the number of electrons ejected...
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Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...