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Updated: May 1, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
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半導体を40ケルビンでレーザーで冷却する

Jun Zhang1, Dehui Li, Renjie Chen

  • 1Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore.

Nature
|January 25, 2013
PubMed
まとめ

研究者は,半導体材料である硫化カドミウムナノリボンで,ネットレーザー冷却を達成しました. この画期的な発見は,半導体における光学冷却を実証しており,以前の方法よりも大きな進歩です.

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Fermi Level

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