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Updated: May 13, 2026

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
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Published on: April 12, 2018

VO2ナノワイヤを等級化ドーピングすることによって,軸工学的に設計された金属・ izolator 段階移行

Sangwook Lee1, Chun Cheng, Hua Guo

  • 1Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA.

Journal of the American Chemical Society
|March 8, 2013
PubMed
まとめ

グレードドーピングされた二酸化バナジウムナノワイヤは,金属・インソレーターの段階的な移行を示し,正確な熱感知とアクチュエーションを可能にします. このエンジニアリングによる移行により,マイクロボロメーターとビモルフアクチュエータの性能が向上します.

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Biasing of Metal-Semiconductor Junctions

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