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Updated: May 13, 2026

Fabrication of Bi2Te3 and Sb2Te3 Thermoelectric Thin Films using Radio Frequency Magnetron Sputtering Technique
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n型AgBiSe2の高熱電気特性がある

Lin Pan1, David Bérardan, Nita Dragoe

  • 1Institut de Chimie Moléculaire et des Matériaux d'Orsay, Université Paris-Sud , UMR 8182, Orsay F-91405, France, and CNRS , Orsay F-91405, France.

Journal of the American Chemical Society
|March 21, 2013
PubMed
まとめ

この研究では,ニオビウム (Nb) ドーピングを使用して熱電気 (TE) 材料AgBiSe2を強化しています. 最適化されたAg0.96Nb0.04BiSe2は,熱電性値 (ZT) を1に倍増し,中温アプリケーションに適しています.

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