フィールド効果トランジスタのための有機半導体の統合材料設計
Jianguo Mei1, Ying Diao, Anthony L Appleton
1Department of Chemical Engineering, Stanford University, Stanford, California 94305, United States.
Journal of the American Chemical Society
|April 6, 2013
まとめ
有機フィールド効果トランジスタ (OFET) の最近の進歩は,高性能の有機半導体をもたらしました. この展望は,OFETアプリケーションの重要なマイルストーン,設計戦略,将来の課題をレビューしています.
科学分野:
- マテリアルサイエンス 材料科学
- オーガニック・エレクトロニクス
- 半導体物理学 半導体物理学
背景:
- オーガニック・フィールド・エフェクト・トランジスタ (OFET) は著しい進歩を遂げ,オーガニック・半導体のモビリティは10cm^2/Vsを超えています.
- この急速な発展は,オーガニック・エレクトロニクスの新時代を象徴しています.
研究 の 目的:
- オーガニック・フィールド・エフェクト・トランジスタ (OFET) の開発の歴史的概要を提供するため.
- 現在のOFETの成功を牽引する分子設計コンセプトとプロセスエンジニアリング技術を導入する.
- OFETの実践的応用における将来の課題を特定する.
主な方法:
- OFETの研究開発における主要なマイルストーンのレビュー.
- 統合された分子設計戦略の分析.
- デバイス製造のためのプロセスエンジニアリングのアプローチの検討.
主要な成果:
- 現在,いくつかの有機半導体では,ベンチマークモビリティ10cm^2/{Vs}を上回っています.
- OFETの歴史における重要なマイルストーンが特定されました.
- 成功した分子設計とプロセスエンジニアリングのアプローチが強調されています.
結論:
- OFET技術は,重要な性能レベルに達しています.
- 分子設計と処理における継続的なイノベーションは極めて重要です.
- 残る課題を克服することは,現実世界のOFETアプリケーションにとって不可欠です.
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