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Updated: May 6, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 2, 2013

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量子ガスのスピンホール効果

M C Beeler1, R A Williams, K Jiménez-García

  • 1Joint Quantum Institute, National Institute of Standards and Technology and University of Maryland, Gaithersburg, Maryland 20899, USA.

Nature
|June 7, 2013
PubMed
まとめ

研究者は,スピン・ホール効果を量子ボゼガスで観察し,スピン・トランジスタを作成しました. このブレークスルーは,粒子の流れを制御するためにスピンに依存する力を使用し,新しいセンサーとトポロジカル量子装置の道を開く.

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