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関連する概念動画

Semiconductors01:22

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Superconductor01:24

Superconductor

A substance that reaches superconductivity, a state in which magnetic fields cannot penetrate, and there is no electrical resistance, is referred to as a superconductor. In 1911, Heike Kamerlingh Onnes of Leiden University, a Dutch physicist, observed a relation between the temperature and the resistance of the element mercury. The mercury sample was then cooled in liquid helium to study the linear dependence of resistance on temperature. It was observed that, as the temperature decreased, the...
Types Of Superconductors01:28

Types Of Superconductors

A superconductor is a substance that offers zero resistance to the electric current when it drops below a critical temperature. Zero resistance is not the only interesting phenomenon as materials reach their transition temperatures. A second effect is the exclusion of magnetic fields. This is known as the Meissner effect. A light, permanent magnet placed over a superconducting sample will levitate in a stable position above the superconductor. High-speed trains that levitate on strong...
Types of Semiconductors01:20

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Band Theory02:35

Band Theory

When two or more atoms come together to form a molecule, their atomic orbitals combine and molecular orbitals of distinct energies result. In a solid, there are a large number of atoms, and therefore a large number of atomic orbitals that may be combined into molecular orbitals. These groups of molecular orbitals are so closely placed together to form continuous regions of energies, known as the bands.
The energy difference between these bands is known as the band gap.
Conductor, Semiconductor,...

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関連する実験動画

Updated: May 8, 2026

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

狭間半導体CsBi4Te6における超伝導性について

Christos D Malliakas1, Duck Young Chung, Helmut Claus

  • 1Materials Science Division, Argonne National Laboratory , Argonne, Illinois 60439, United States.

Journal of the American Chemical Society
|September 14, 2013
PubMed
まとめ

超伝導性は,狭間半導体セシウムビスムートテルリド (CsBi4Te6) で発見されました. この発見は,この材料のクラスへのドーピングが,新種の半導体ベースの超伝導体を生成することを示唆しています.

科学分野:

  • 凝縮物質物理学 凝縮物質物理学
  • マテリアルサイエンス 材料科学
  • 固体化学 固体化学

背景:

  • 超伝導性は,電気抵抗がゼロの現象であり,通常,金属や合金で観察されます.
  • 狭いギャップの半導体は,超伝導性研究のためのユニークな,ほとんど未知の道を提示します.
  • ホモロゴス系Cs4[Bi(2n+4) Te(3n+6) ]は,新しい電子特性を持つ可能性のある素材のクラスで,最近特定されました.

研究 の 目的:

  • 狭間半導体CsBi4Te6.6における超伝導性の可能性を調査する.
  • CsBi4Te6.6の臨界温度と臨界場を含む超伝導特性について説明する.
  • CsBi4Te6系とその同類系における結晶構造と超伝導性の関係を探求する.

主な方法:

  • 温度に依存する電気抵抗性測定.
  • 温度に依存する磁気感受性測定.
  • 磁場依存の電気抵抗性測定で,重要な磁場を測定する.

主要な成果:

  • 超伝導性は,超伝導的移行温度 (Tc) が約4.4Kのp型CsBi4Te6サンプルで観察されました.
  • ステイキオメトリックCsBi4Te6は超伝導性がないことが判明し,サンプルタイプやドーピングの重要性を示している.

さらに関連する動画

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

Comparison of Two Different Synthesis Methods of Single Crystals of Superconducting Uranium Ditelluride
04:51

Comparison of Two Different Synthesis Methods of Single Crystals of Superconducting Uranium Ditelluride

Published on: July 8, 2021

関連する実験動画

Last Updated: May 8, 2026

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

Comparison of Two Different Synthesis Methods of Single Crystals of Superconducting Uranium Ditelluride
04:51

Comparison of Two Different Synthesis Methods of Single Crystals of Superconducting Uranium Ditelluride

Published on: July 8, 2021

  • 約10テスラの高臨界磁場 (Hc) は,フィールド依存抵抗力データから推定された.
  • CsBi4Te6系は単一クリン構造で結晶し,Cs4[Bi(2n+4) Te(3n+6) ]同類系の最初のメンバーである.
  • 結論:

    • 非伝統的な超伝導性は,狭間半導体CsBi4Te6.6で発見されました.
    • この高臨界場は,強い磁場環境での応用の可能性を示唆しています.
    • Cs4[Bi(2n+4) Te(3n+6) ]ホモログ系内のドーピングは,半導体ベースの超伝導体の新しいクラスの開発につながる可能性があります.