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Updated: May 5, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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MgOにおける表面端の螺旋変位の電子的および化学的性質

Keith P McKenna1

  • 1Department of Physics, University of York , Heslington, York YO10 5DD, United Kingdom.

Journal of the American Chemical Society
|November 28, 2013
PubMed
まとめ

金属酸化物における表面変位は,材料の性質に影響を与える重要なトポロジカルな欠陥である. この研究は,それらの有意な電子捕捉能力を明らかにし,酸化物表面の化学と電子学の理解を深める.

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