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Updated: Apr 29, 2026

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
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ベンジルバイオロゲンによるMoS2の空気安定面積移ドーピングによるMoS2のドーピング

Daisuke Kiriya1, Mahmut Tosun, Peida Zhao

  • 1Electrical Engineering and Computer Sciences, University of California , Berkeley, California 94720, United States.

Journal of the American Chemical Society
|May 20, 2014
PubMed
まとめ

ベンジルビオロゲン (BV) は,モリブデン二硫化物 (MoS2) フレークの空気安定性 n-ドーピングを可能にし,変性ドーピング限界を達成します. この表面電荷移転法により,デバイスの性能が向上し,キャリア密度の可逆制御が可能になります.

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