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関連する概念動画

Types of Semiconductors01:20

Types of Semiconductors

1.8K
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
1.8K
Energy Bands in Solids01:01

Energy Bands in Solids

2.4K
Isolated atoms have discrete energy levels that are well described by the Bohr model. And, it quantifies the energy of an electron in a hydrogen atom as En. Higher quantum numbers 'n' yield less negative, closer electron energy levels.
 Band Formation:
When atoms are brought close together, as in a solid, these discrete energy levels begin to split due to the overlap of electron orbitals from adjacent atoms. This split occurs because of the Pauli exclusion principle, which states...
2.4K
Semiconductors01:22

Semiconductors

1.8K
There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
1.8K
Band Theory02:35

Band Theory

14.6K
When two or more atoms come together to form a molecule, their atomic orbitals combine and molecular orbitals of distinct energies result. In a solid, there are a large number of atoms, and therefore a large number of atomic orbitals that may be combined into molecular orbitals. These groups of molecular orbitals are so closely placed together to form continuous regions of energies, known as the bands.
The energy difference between these bands is known as the band gap.
Conductor, Semiconductor,...
14.6K
Fermi Level01:18

Fermi Level

2.5K
The Fermi-Dirac function is represented by an S-shaped curve indicating the probability of an energy state being occupied by an electron at a given temperature. The Fermi level is the energy level at which there is a fifty percent chance of finding an electron, and it is positioned between the lower-energy valence band and the higher-energy conduction band.
At absolute zero temperature, electrons fill all energy states up to the Fermi level, leaving upper states empty. As the temperature rises,...
2.5K
Network Covalent Solids02:18

Network Covalent Solids

12.9K
Network covalent solids contain a three-dimensional network of covalently bonded atoms as found in the crystal structures of nonmetals like diamond, graphite, silicon, and some covalent compounds, such as silicon dioxide (sand) and silicon carbide (carborundum, the abrasive on sandpaper). Many minerals have networks of covalent bonds.
To break or to melt a covalent network solid, covalent bonds must be broken. Because covalent bonds are relatively strong, covalent network solids are typically...
12.9K

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Updated: Apr 27, 2026

Developing High Performance GaP/Si Heterojunction Solar Cells
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Developing High Performance GaP/Si Heterojunction Solar Cells

Published on: November 16, 2018

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ダイレクト・バンド・ギャップ シリコン・アロトロプ

Qianqian Wang1, Bo Xu, Jian Sun

  • 1State Key Laboratory of Metastable Materials Science and Technology, Yanshan University , Qinhuangdao 066004, Hebei Province, China.

Journal of the American Chemical Society
|June 28, 2014
PubMed
まとめ

新しいシリコンアロトロプは,太陽エネルギー変換の改善を提供します. これらの材料は,次世代光伏モジュールの可能性を示し,太陽光発電の利用を向上させています.

科学分野:

  • マテリアルサイエンス 材料科学
  • 凝縮物質物理学 凝縮物質物理学
  • 再生可能エネルギーの再生可能エネルギー

背景:

  • 基本的なシリコンは,現代技術,特に太陽電池産業において極めて重要です.
  • 現在のシリコン太陽電池は,太陽エネルギーを完全に活用する上で制限に直面しています.
  • 先進的なクリーンエネルギーソリューションに対する社会的需要があります.

研究 の 目的:

  • 計算的方法を使用して,シリコンの新型メタステーブルアロトロプを予測する.
  • 太陽エネルギー変換のための最適な帯域のギャップを持つシリコン構造を特定する.
  • これらの新しいシリコン相の光学特性を評価するために.

主な方法:

  • シリコンアロトロプの性質を予測するために,Ab initio計算が採用されました.
  • この研究は,環境圧で構造を予測することに焦点を当てました.
  • バンドギャップと光学特性は,様々なシリコンフェーズで計算されました.

主要な成果:

  • 直接的または準直接的帯域ギャップ (0.39-1.25 eV) を有する6つの転移性シリコンアロトロプが予測されました.
  • これらのアロトロップのうち5つは,光伏効率の最適範囲内の帯域ギャップを示しています.

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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

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10:31

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Fabrication and Optimization of Type II Silicon Clathrate Films
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Fabrication and Optimization of Type II Silicon Clathrate Films

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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

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  • これらの新しいシリコン相は,標準のSi-I相と比較して優れた光学特性を示しています.
  • 結論:

    • 予測されたシリコンアロトロップは,先進的な太陽電池アプリケーションの有望な候補である.
    • これらの材料は,太陽エネルギーを電気エネルギーに変換する効率を大幅に向上させることができます.
    • これらの構造物の多様な帯域のギャップは,それらを複数ジャンクションの光伏モジュールに適しています.