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ビライヤー・グラフェン. 電子穴非対称整数および二重層グラフェンの二重層グラフェンの断片量子ホール効果

A Kou1, B E Feldman2, A J Levin2

  • 1Department of Physics, Harvard University, Cambridge, MA 02138, USA. Department of Applied Physics, Yale University, New Haven, CT 06520, USA.

Science (New York, N.Y.)
|July 5, 2014
PubMed
まとめ

研究者らは二重層グラフェンの分数量子ホール (FQH) 状態を研究した. 彼らは新しいFQH状態を観察し,これらの電子システムにおける軌道変異の重要な役割を明らかにしました.

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