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Updated: Apr 25, 2026

Ambient Method for the Production of an Ionically Gated Carbon Nanotube Common Cathode in Tandem Organic Solar Cells
14:37

Ambient Method for the Production of an Ionically Gated Carbon Nanotube Common Cathode in Tandem Organic Solar Cells

Published on: November 5, 2014

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地域における高開回路電圧 定期的な狭帯のギャップポリマー太陽電池

Ming Wang1, Hengbin Wang, Takamichi Yokoyama

  • 1Center for Polymers and Organic Solids, ‡Mitsubishi Chemical Center for Advanced Materials, §Departments of Chemistry and Biochemistry, University of California , Santa Barbara, California 93106, United States.

Journal of the American Chemical Society
|August 15, 2014
PubMed
まとめ

狭いバンドギャップを持つ新しい結合ポリマー,PIPCPが合成されました. その高度に秩序付けられた構造は,有機太陽電池の電力変換効率を大幅に改善し,高いオープン回路電圧を達成しました.

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P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
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Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
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Diode: Reverse bias

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Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
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