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単層グラフェンの欠陥密度と異質な電子伝送率の量的な相関

Jin-Hui Zhong1, Jie Zhang, Xi Jin

  • 1State Key Laboratory of Physical Chemistry of Solid Surfaces, Collaborative Innovation Center of Chemistry for Energy Materials, the MOE Key Laboratory of Spectrochemical Analysis & Instrumentation, and Department of Chemistry, College of Chemistry and Chemical Engineering, and ‡Department of Physics, Laboratory of Nanoscale Condensed Matter Physics, Xiamen University , Xiamen 361005, China.

Journal of the American Chemical Society
|October 29, 2014
PubMed
まとめ

Ar ((+)) 放射線によるグラフェンの空白欠陥の正確な制御は,その電気化学的活動を最適化します. 適度な欠陥密度は,電子特性をバランスさせ,デバイスの性能を向上させることで,異質な電子伝送率を高めます.

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