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Updated: Apr 19, 2026

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
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Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope

Published on: March 24, 2019

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FeBi2Se4における高T (c) フェロマグネティズムとn型電気伝導性の共存

Kulugammana G S Ranmohotti1, Honore Djieutedjeu, Juan Lopez

  • 1Laboratory for Emerging Energy and Electronic Materials, Department of Materials Science and Engineering, University of Michigan , Ann Arbor, Michigan 48109, United States.

Journal of the American Chemical Society
|December 25, 2014
PubMed
まとめ

研究者らはFeBi2Se4を発見し,高伝導性とキュリー温度 (Tc) 450 Kの新しいn型フェロ磁性半導体 (n-FMS) を発見した.この画期的な発見は,半導体スピントロニクスとスピンベースのデバイスを前進させる.

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