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Fabrication and Optimization of Type II Silicon Clathrate Films
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分子から表面へ:シリコン上のSi-SとSi-Se結合形成の根源ベースのメカニズム

Jillian M Buriak1, Md Delwar H Sikder1

  • 1Department of Chemistry, University of Alberta, and the National Institute for Nanotechnology, Edmonton, AB T6G 2G2, Canada.

Journal of the American Chemical Society
|July 11, 2015
PubMed
まとめ

本研究では,オーガノカルコゲニドを用いたシリコンの表面改変を調査し,室温でシリコン-硫黄およびシリコン-セレニウム結合を生成します. これらの急性反応を理解することで,半導体表面化学のより広範な応用が可能になります.

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