デバイス技術 MoTe2におけるオーム式同接点接触の相パターン
Suyeon Cho1, Sera Kim2, Jung Ho Kim2
1IBS Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science, Sungkyunkwan University, Suwon 440-746, Korea.
Science (New York, N.Y.)
|August 8, 2015
まとめ
研究者は,レーザー誘発フェーズパターニングを使用して,安定した2Dモリブデンディテルリド (MoTe2) 装置を開発しました. このテクニックはオーム異相ホモ結合を作り,MoTe2トランジスタのキャリアモビリティを大幅に高めます.
科学分野:
- 材料科学
- 凝縮物質物理学
- ナノテクノロジー
背景:
- 二次元の (2D) ヴァン・デル・ワールスのヘテロ構造は,次世代の電子機器にとって極めて重要です.
- 現在の製造方法は,不純物,転移安定性,不均一性などの課題に直面し,本物の2Dヘテロ構造デバイスを制限しています.
研究 の 目的:
- 2Dヘテロ構造を製造するための安定的かつ効率的な方法を開発する.
- モリブデン・ディテルリド (MoTe2) でオーム異相ホモ結合を作り,デバイスの性能を向上させる.
主な方法:
- ポリモルフ工学の技術である レーザー誘発フェーズパターニングを使用した.
- 半導体六角形 (2H) と金属単角形 (1T') MoTe2の間の異相同結合を製造した.
- インサイトスキャニング伝送電子顕微鏡と理論的な計算を用いた.
主要な成果:
- MoTe2で安定したオームヘテロフェーズホモジャンクションを達成し,最大300°Cで安定した.
- 約50倍に MoTe2 トランジスタのキャリアモビリティを増加させた.
- 10 ^ 6の高いオン/オフ電流比を維持しました.
- MoTe2のローカル・フェーズ・トランジションのトリガーとしてTe空白を特定した.
結論:
- レーザー誘発のフェーズパターニングは,オームコンタクトを持つ真の2Dデバイスの作成を可能にします.
- 製造されたMoTe2ヘテロ構造は,高度なデバイスのために著しく強化された電子特性を提供します.
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