デバイス技術 トランジスタにおけるナノ材料:高性能から薄膜アプリケーションまで
1Department of Electrical and Computer Engineering and Department of Chemistry, Duke University, Durham, NC 27708, USA.
Science (New York, N.Y.)
|August 15, 2015
まとめ
ナノ材料はシリコントランジスタの限界を 克服し より速く効率的な電子機器を 実現することを約束しています 研究は高性能コンピューティングと柔軟なデバイスのための炭素ナノチューブとグラフェンを探求しています.
科学分野:
- 材料科学
- 電気工学
- ナノテクノロジー
背景:
- シリコン・トランジスタは 速度と電力の限界に 直面しています
- 次世代トランジスタの性能に 潜在的な解決策を提示しています
研究 の 目的:
- 高性能トランジスタと薄膜トランジスタの違いを見直す.
- トランジスタにおけるナノ材料の使用の利点と課題を評価する.
- ナノ材料ベースのトランジスタの進歩と研究ニーズを概説します.
主な方法:
- トランジスタにおけるナノマテリアルの応用に関する文献レビュー
- 異なるタイプのトランジスタの材料特性分析.
- 炭素ナノチューブ,グラフェン,および関連する材料の進歩の合成.
主要な成果:
- 炭素ナノチューブやグラフェンは トランジスタの性能を向上させると有望です
- 特定の材料の選択は,アプリケーションのニーズ (高性能対薄膜) に依存します.
- トランジスタを広く使用するためにナノマテリアルを統合するにあたって,依然として課題が残っています.
結論:
- ナノ材料は高性能コンピューティングや 柔軟な電子機器など 将来のトランジスタ技術にとって 極めて重要です
- 統合の課題を克服するためにさらなる研究が必要である.
- ナノ材料は現在のシリコンの限界を超えて 新しい応用を可能にします
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