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Updated: Jul 22, 2026

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

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難解なβ-Zn8Sb7:新しい亜鉛アンチモナイド熱電

Jian Wang1, Kirill Kovnir1

  • 1Department of Chemistry, University of California, Davis , One Shields Avenue, Davis, California 95616, United States.

Journal of the American Chemical Society
|September 16, 2015
PubMed
まとめ

研究者は新しい熱電性物質 beta-Zn8Sb7を合成し 期待できる性能を示しています この超安定化合物は 熱電気装置の開発に 新たな道を開きます

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Demonstrating the Simplicity and In Situ Temperature Monitoring of the Mechanochemical Synthesis of Metal Chalcogenides Suitable for Thermoelectrics04:09

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Imperfections in Crystal Structure: Stoichiometric Point Defects01:26

Imperfections in Crystal Structure: Stoichiometric Point Defects

Schottky defects arise when some lattice points in a crystal, such as those in NaCl, remain unoccupied, creating lattice vacancies without disturbing the overall electrical neutrality of the crystal. This defect is common in ionic crystals where the positive and negative ions are similar in size, as seen in sodium chloride and cesium chloride. The presence of Schottky defects enables the crystal to conduct electricity to a small extent through an ionic mechanism. Electric fields cause nearby...