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Updated: Mar 30, 2026

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超薄なナノシートの進化 半導体から半金属への可逆的移行

Mengjie Lyu, Youwen Liu, Yuduo Zhi

  • 1High Magnetic Field Laboratory, Chinese Academy of Sciences , Hefei, Anhui 230031, PR China.

Journal of the American Chemical Society
|November 5, 2015
PubMed
まとめ

研究者らは,亜鉛二酸化物 (SnO2) のナノシートを使用した柔軟な,室温の電磁抵抗スイッチランダムアクセスメモリ (RRAM) 装置を開発した. 折りたたみ可能なデータストレージを可能にし, 非揮発性メモリとスピントロニクスを統合します.

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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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The work...
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P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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