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ゲートされたMoS2における二次元イッシング超伝導性の証拠

J M Lu¹, O Zheliuk¹, I Leermakers²

¹Device Physics of Complex Materials, Zernike Institute for Advanced Materials, Nijenborgh 4, 9747 AG, Groningen, Netherlands.

Science (New York, N.Y.)

|November 14, 2015

まとめ

ゼーマン効果は,電子スピンをロックすることによって,モリブデン二酸化物トランジスタの超伝導性を保護することができます. この研究は,パウリ限界を超えて重要なフィールドを大幅に強化した新しいイッシング超伝導体を示しています.

科学分野:

凝縮物質物理学
材料科学
超伝導性

背景:

ゼーマン効果は通常,電子のスピンを並べることで超伝導性を抑制します.
固有のスピン軌道結合は,超伝導性を保護する効果的ジーマンフィールドを作成することができます.
モリブデン二酸化物 (MoS2) は,新しい超伝導特性を持つ2D材料です.

研究の目的:

硫化モリブデントランジスタ内の超伝導性におけるジーマン効果の保護作用を調査する.
超伝導特性に対するキャリアドーピングとゲーティングの影響を調査する.
MoS2にイージング超伝導体の存在を実験的に確認する.

主な方法:

イオンゲートモリブデンジスルファイドトランジスタの製造.
機内における重要な磁場 (Bc2) を測定するための磁気輸送実験.
超伝導状態を修正するためにイオンゲートを通してキャリアドーピングレベルを調節します.

主要な成果:

パウリパラマグネティック限界を大幅に超えた平面内の臨界場 (Bc2) を観測した.
ゲーティング強化のBc2は MoS2の量より 1 倍の量であった.
超伝導性の存在とイージング超伝導性の存在を裏付ける実験的証拠

結論:

MoS2の固有のスピン軌道結合は,超伝導性を保護する効果的なジーマンフィールドを作成できます.
MoS2トランジスタは,強く固定された電子スピンによって特徴づけられるイッシング超伝導性を示す.
この研究は,強化された重要なフィールドを持つ超伝導体の設計と利用の道を開きます.

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