五角二ピラミッド型Dy (III) シングルイオン磁石で20Kで対称性サポートされた磁気ブロック
Yan-Cong Chen1, Jun-Liang Liu1, Liviu Ungur2,3
1Key Laboratory of Bioinorganic and Synthetic Chemistry of Ministry of Education, School of Chemistry and Chemical Engineering, Sun Yat-Sen University , Guangzhou 510275, P. R. China.
Journal of the American Chemical Society
|February 18, 2016
まとめ
五角二ピラミッド型 Dy(III) シングルイオン磁石 (SIM) は,磁気化の量子トンネル化 (QTM) を抑制するために合成されました. これらの新しいSIMは高エネルギーバリアを示し,磁気ヒステリシス温度を記録し,データを保存するための分子磁気を前進させます.
科学分野:
- 分子磁気
- 量子コンピューティングの材料
- ナノテクノロジー
背景:
- 単分子磁石 (SMM) は,高密度データ保存と量子処理に有望である.
- シングルイオン磁石 (SIM) の量子トンネル化 (QTM) は,リラックス時間を制限する.
- QTMを抑制することは,SMMのパフォーマンスを高めるために不可欠です.
研究 の 目的:
- 五角二ピラミッド対称性のDy ((III) SIMを設計し合成する.
- この対称性のQTM抑制への影響を調査する.
- 先進的な磁気応用の可能性を探るため
主な方法:
- 五角二ピラミッド型のDy (III) 複合体の合成: [Dy (Cy3PO) ]2 (H2O) ]Cl3· (Cy3PO) ·H2O·EtOH (1) と [Dy (Cy3PO) ]2 (H2O) ]Br3·2 (Cy3PO) ·2H2O·2EtOH (2).
- SMMの特性,エネルギーバリア,磁気ヒステリシスを評価するための磁気特性.
- 基本的な磁気行動を理解するための Ab initio 計算.
主要な成果:
- 五角二ピラミッド形状の2つの新しいDy (III) SIMを合成した.
- 複合体1では472k,複合体2では543kの高エネルギーバリアを観測した.
- 複合体2で20Kまでの磁気ヒステリシス温度を達成し,QTMを抑制しました.
結論:
- 五角二ピラミッド対称性は,Dy (III) SIMにおけるQTMを効果的に抑制する.
- これらの発見は,分子磁気学の応用のための重要な可能性を示している.
- 高度な磁気材料を開発する強力な戦略です
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