カップレート超伝導体の偽ギャップの臨界点におけるキャリア密度の変化
S Badoux1, W Tabis2,3, F Laliberté2
1Département de physique, Regroupement Québécois sur les Matériaux de Pointe, Université de Sherbrooke, Sherbrooke, Québec J1K 2R1, Canada.
Nature
|February 23, 2016
まとめ
カップレート超伝導体における偽ギャップと電荷順序は別々の現象であり,その電荷順序は偽ギャップよりも低いドーピングレベルで終了する. しかし,偽ギャップは,反鉄磁気モット断熱器相に関連しています.
科学分野:
- 凝縮物質物理学
- 材料科学
- 量子材料について
背景:
- キュープレート超伝導体における偽ギャップは,よく理解されていない現象です.
- モット断熱器の相と充電順の関係が不明である.
研究 の 目的:
- カップレート超伝導体における擬似ギャップ,電荷順序,モット断熱器相の関係を調査する.
- これらの現象の重要なドーピングレベルを決定する.
主な方法:
- 高磁場 (88テスラまで) でのホール係数の測定.
- フェルミ表面再構築とキャリア密度の分析
主要な成果:
- 充電順によるフェルミ表面再構成は,p = 0.16の臨界ドーピングで停止する.
- この臨界ドーピングは,偽の臨界点 (p* = 0.19) よりも低い.
- モット・イソレータとのつながりを示すキャリア密度の変化は,偽ギャップの臨界点から始まります.
結論:
- 擬似ギャップと電荷の順序は,クプレート超伝導体における異なる現象である.
- 偽ギャップは,反鉄磁気モット断熱器フェーズに接続されています.
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