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Updated: Mar 25, 2026

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マイクロスーパーキャパシタのためのオンチップおよびフリースタンドの弾性炭素フィルム

P Huang1, C Lethien2, S Pinaud3

  • 1Université Paul Sabatier-Toulouse III, Laboratoire Centre Inter-universitaire de Recherche et d'Ingénierie des Matériaux (CIRIMAT), UMR CNRS 5085, 118 route de Narbonne, 31062 Toulouse, France. Réseau sur le Stockage Electrochimique de l'Energie, FR CNRS n°3459, France.

Science (New York, N.Y.)
|February 26, 2016
PubMed
まとめ

カーバイド製のカーボンフィルムを用いて オンチップのマイクロスーパーコンデンサータの ワッフルスケールプロセスを開発しました この技術革新により シリコンベースの電子機器の 統合されたエネルギー貯蔵が可能になり 携帯機器の発展の道が開けました

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Capacitor With A Dielectric01:18

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Parallel plate capacitors consist of two conducting plates separated by a certain distance. However, it is mechanically difficult to hold the large plates parallel to each other without actual contact. Hence, a dielectric layer is commonly placed between the plates, which provides an easy solution for holding the plates together with a small gap and increases the capacitance of the capacitor.
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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
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