D 金属酸化物半導体で合成された結合された有機ナノワイヤに沿った帯域分散
Guillaume Vasseur1,2, Mikel Abadia1, Luis A Miccio1,2
1Centro de Física de Materiales (Consejo Superior de Investigaciones Científicas (CSIC)/Universidad del País Vasco (UPV)-Euskal Herriko Unibertsitatea (EHU)-Materials Physics Center (MPC) , Paseo Manuel Lardizabal 5, 20018 San Sebastián, Spain.
Journal of the American Chemical Society
|April 27, 2016
まとめ
研究者は,表面限定の脱ハロゲン化を使用して,半導体二酸化チタンの上にポリ (p-フェニレン) 鎖を合成した. この突破により,低伝導性の表面に新しい分子半導体装置が作られます.
科学分野:
- 材料科学
- 表面化学
- ナノテクノロジー
背景:
- 表面限定デハロゲン化は,炭素ナノ構造のボトムアップ合成を可能にします.
- 現在の方法は金属表面を必要とし,低伝導性の基板への適用を制限しています.
研究 の 目的:
- 半導体TiO2 (p-フェニレン) 鎖を合成する.
- 炭素ナノ構造を 移行金属酸化物表面で合成する 可能性を証明する
主な方法:
- 4,4′′-dibromoterphenyl前駆体による脱ハロゲネーティブホモカップリング
- 低エネルギー電子微分法 (LEED) とスキャニングトンネル顕微鏡 (STM) を用いて相識別を行う.
- 化学的および電子的特徴化のためのX線光電子スペクトロスコーピー (XPS) と角度解像度光放射スペクトロスコーピー (ARPES).
主要な成果:
- TiO2 (p-フェニレン) 鎖の配列がTiO2 (p-フェニレン) 鎖で成功して合成された.
- 超分子とポリマー相の区別は,基板温度を変化させることで達成された.
- デハロゲネーションの発症は475K頃に観察された.
- 顕微鏡検査で,高分散帯を介して成功したポリメリゼーションが確認されました.
結論:
- 原子的に正確な炭素ベースのナノ構造は 移行金属酸化物表面で合成できます
- これは,新しい分子半導体装置のボトムアップ生産の見通しを開きます.
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