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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

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コアレス超四面体カルコゲニドナノクラスターから誘発された内在の"空白点欠陥"電気化学発光

Feng Wang1, Jian Lin2, Tingbi Zhao1

  • 1Department of Chemistry, Beijing Key Laboratory for Analytical Methods and Instrumentation, Key Laboratory of Bioorganic Phosphorus Chemistry & Chemical Biology of Ministry of Education, Tsinghua University , Beijing 100084, China.

Journal of the American Chemical Society
|May 27, 2016
PubMed
まとめ

この研究は,カドミウムインジウム硫化物ナノクラスター (Cd-In-S NCs) の点欠陥と,その電気化学発光 (ECL) の性質を相関させる. 研究者らは欠陥の役割を特定し センサーやイメージングアプリケーションの 調節可能な半導体材料への道を切り開きました

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