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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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空白順のダブルペロフスキット半導体 Cs2SnI6 と Cs2TeI6 の欠陥耐性に対する不耐性

Annalise E Maughan1, Alex M Ganose2,3, Mitchell M Bordelon1

  • 1Department of Chemistry, Colorado State University , Fort Collins, Colorado 80523-1872, United States.

Journal of the American Chemical Society
|June 11, 2016
PubMed
まとめ

Cs2SnI6ペロブスキットのテルリウム置換は,ヨウ素の空白形成を阻害することによって,予想外の伝導性を減少させる. この研究は,光伏の用途のためのダブルペロブスキットの欠陥耐性を明らかにします.

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