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Updated: Mar 13, 2026

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狭間半導体における超伝導性 RbBi11/3Te6

Christos D Malliakas1, Duck Young Chung1, Helmut Claus1

  • 1Materials Science Division, Argonne National Laboratory , Argonne, Illinois 60439, United States.

Journal of the American Chemical Society
|October 18, 2016
PubMed
まとめ

研究者は,狭い帯域の隙間を持つ新しい層状の材料であるRbBi11 / 3Te6で超伝導性を発見しました. 化学チューニングにより,その臨界温度 (Tc) が10%まで上昇し,新しい超伝導体開発の道が開けました.

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