関連する実験動画

Updated: Mar 12, 2026

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

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超低功率と高固有増益のスロットキー・バリア薄膜トランジスタ

Sungsik Lee1, Arokia Nathan2

  • 1Electrical Engineering Division, Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, UK.

Science (New York, N.Y.)
|November 16, 2016
PubMed
まとめ

研究者らは,モノのインターネットのための新しいインジウム-ガリウム-亜鉛酸化トランジスタを開発しました. このデバイスは超低電力 (<1ナノワット) と低電圧で動作し,バッテリー不足のウェアラブルアプリケーションに最適です.

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